Some aspects on modeling and characterization of deep submicrometer CMOS gates driving lossless transmission lines

Abstract

The transient behavior of a CMOS gate driving an inductive-capacitive (lossless) transmission line is investigated. The case of input signal transition time smaller than twice the transmission line propagation delay is considered. Closed-form expressions for the output voltage and short-circuit power are derived. Also, a formula for calculating the transistor widths for the matched condition is obtained. The nth power law MOSFET model for short-channel devices is used. The final results are in very good agreement with SPICE simulations.