{"title":"A Referenced Geometry Based Configuration Scalable Mextram Model for Bipolar Transistors","authors":"H. Wu, S. Mijalkovic, J. Burghartz","doi":"10.1109/BMAS.2006.283469","DOIUrl":null,"url":null,"abstract":"A behavioral reference based model for configuration scaling of bipolar transistor model parameters is proposed. The model is applicable to bipolar technologies with one or two collector contacts and different number of emitters. The effectiveness of the proposed scaling methodology is verified in case studies using advanced high-speed SiGe HBT technology","PeriodicalId":235383,"journal":{"name":"2006 IEEE International Behavioral Modeling and Simulation Workshop","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Behavioral Modeling and Simulation Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BMAS.2006.283469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A behavioral reference based model for configuration scaling of bipolar transistor model parameters is proposed. The model is applicable to bipolar technologies with one or two collector contacts and different number of emitters. The effectiveness of the proposed scaling methodology is verified in case studies using advanced high-speed SiGe HBT technology