A Referenced Geometry Based Configuration Scalable Mextram Model for Bipolar Transistors

H. Wu, S. Mijalkovic, J. Burghartz
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引用次数: 6

Abstract

A behavioral reference based model for configuration scaling of bipolar transistor model parameters is proposed. The model is applicable to bipolar technologies with one or two collector contacts and different number of emitters. The effectiveness of the proposed scaling methodology is verified in case studies using advanced high-speed SiGe HBT technology
一种基于参考几何的双极晶体管配置可扩展极值模型
提出了一种基于行为参考的双极晶体管模型参数组态缩放模型。该模型适用于具有一个或两个集电极触点和不同数量发射体的双极技术。采用先进的高速SiGe HBT技术的案例研究验证了所提出的缩放方法的有效性
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