Low power balun Design for 1.575 GHz in 90 nm CMOS rechnology

Abstract

In this paper low power balun design is presented. It is optimized for 1.575 GHz and designed in 90 nm UMC CMOS technology. Current consumption is only 0.44 mA under 1.2 V supply voltage. The simulation shows that gain and phase imbalance are equal to 0.08 dB and 0.045°, respectively. Single-ended power gain of this circuit is 2.2 dB. A special dimension matching has been made to minimize circuit susceptibility to variation of the manufacturing process.