Delta-Doped Sagm-Avalanche Photodiodes

[1991] 49th Annual Device Research Conference Digest Pub Date : 1991-06-17 DOI:10.1109/DRC.1991.664699

R. Kuchibhotla, J. Campbell, C. Tsai, W. Tsang

引用次数: 4

Abstract

Summary form only given. The fabrication of a delta-doped SAGM-APD is reported. The multiplication region is only 0.3 mu m thick. A gain-bandwidth product of 75 GHz has been achieved. Using a top-surface reflector, quantum efficiencies of over 70% have been obtained even though the absorption layer is only 1.1 mu m thick. >

查看原文本刊更多论文

δ掺杂sagm雪崩光电二极管

只提供摘要形式。报道了δ掺杂SAGM-APD的制备。乘法区的厚度仅为0.3 μ m。获得了75 GHz的增益带宽产品。使用顶面反射器，即使吸收层只有1.1 μ m厚，量子效率也超过70%。>

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

[1991] 49th Annual Device Research Conference Digest

自引率

0.00%

发文量