A 42ns 1Mb CMOS SRAM

O. Minato, T. Sasaki, S. Honjo, K. Ishibashi, Y. Sasaki, N. Moriwaki, K. Nishimura, Y. Sakai, S. Meguro, M. Tsunematsu, T. Masuhara
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引用次数: 6

Abstract

A 128KW×8b RAM with address access time of 42ns and power dissipation of 200mW at 10MHz will be presented. Cell size of 45μm2has been achieved by using polysilicon technology and 0.8μm MOS transistors.
42ns 1Mb CMOS SRAM
将介绍一种地址访问时间为42ns, 10MHz时功耗为200mW的128KW×8b RAM。采用多晶硅技术和0.8μm的MOS晶体管,实现了45μm2的电池尺寸。
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