Shinkeun Kim, Youngsoo Seo, Dokyun Son, Myounggon Kang, Hyungcheol Shin
{"title":"Analysis of two divided component of NBTI framework using TCAD simulation","authors":"Shinkeun Kim, Youngsoo Seo, Dokyun Son, Myounggon Kang, Hyungcheol Shin","doi":"10.23919/SNW.2017.8242311","DOIUrl":null,"url":null,"abstract":"In this paper, the two Negative Bias Temperature Instability (NBTI) framework components are divided with interface trap generation (Δ Vit) and hole trapping in pre-existing defects (Δ Vht). The threshold voltage shift (ΔVT) contribution is verified by two divided components and studied independently. The impact of inter layer (IL) thickness is simulated under NBTI stress using technology computer-aided design (TCAD) software.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Silicon Nanoelectronics Workshop (SNW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/SNW.2017.8242311","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, the two Negative Bias Temperature Instability (NBTI) framework components are divided with interface trap generation (Δ Vit) and hole trapping in pre-existing defects (Δ Vht). The threshold voltage shift (ΔVT) contribution is verified by two divided components and studied independently. The impact of inter layer (IL) thickness is simulated under NBTI stress using technology computer-aided design (TCAD) software.