Characterization of silicon avalanche photodiode in term of breakdown voltage and leakage current

Abstract

The avalanche photodiode is designed by using SILVACO TCAD tool, a simulation tool for fabrication process and also electrical performances. This project proposed a planar Si Avalanche Photodiode with presence of guard ring and non guard ring. It is operated in reverse bias which means by using Silvaco Athena and Atlas, the anode connected to the negative terminal and ground to the cathode in fabrication. The project includes the effect and relationship of avalanche photodiode between substrate concentrations and doping, type of materials, with the breakdown voltage and leakage current were investigated. Then, the structure is applied with guard ring structure .At the end, we choose the best optimized design of avalanche photodiode based on current-voltage characteristics.