GDNMOS and GDBIMOS devices for ESD protection in 28nm thin film UTBB FD-SOI technology

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Pub Date : 2018-03-19 DOI:10.1109/ULIS.2018.8354737

L. De Conti, S. Cristoloveanu, M. Vinet, P. Galy

引用次数: 1

Abstract

GDNMOS (Gated Diode merged NMOS) and GDBIMOS (Gated Diode merged BIMOS) were fabricated using the 28nm thin film UTBB FD-SOI CMOS technology. Different connectivity conditions were measured and simulated. The devices are reconfigurable and promising for ESD protection applications.

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用于ESD保护的GDNMOS和GDBIMOS器件采用28nm薄膜UTBB FD-SOI技术

采用28nm薄膜UTBB FD-SOI CMOS技术制备了门控二极管合并NMOS (GDNMOS)和门控二极管合并BIMOS (GDBIMOS)。对不同的连通性条件进行了测量和模拟。该器件具有可重构性，有望用于ESD保护应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

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