The effect of microstructure on electromigration induced voids

Abstract

We present the application of a state of the art electromigration model on a dual damascene interconnect with typical copper microstructure. The influence of the microstructure on the formation and development of an electromigration induced void is studied by simulation and the results are compared with experiments. A close investigation has shown that the network of grain boundaries has a decisive impact on the formation of void nucleation sites and void development.