Investigation of the optical properties of a-Si:H films deposited by PECVD using various experimental techniques

Abstract

In order to study the optical properties of hydrogenated amorphous silicon (a-Si:H) films prepared by plasma-enhanced chemical vapor deposition (PECVD), the influence of process parameters on the extinction coefficient (EC) and the refractive index(n) of a-Si:H films is investigated in the spectrum from 400 to 900 cm−1. The results show that the enhanced HF power and substrate temperature are the most important parameters for increasing the EC and n of the film.