A 256 energy bin spectrum X-ray photon-counting image sensor providing 8Mcounts/s/pixel and on-chip charge sharing, charge induction and pile-up corrections

A. Peizerat, J. Rostaing, P. Ouvrier-Buffet, S. Stanchina, P. Radisson, E. Marche
{"title":"A 256 energy bin spectrum X-ray photon-counting image sensor providing 8Mcounts/s/pixel and on-chip charge sharing, charge induction and pile-up corrections","authors":"A. Peizerat, J. Rostaing, P. Ouvrier-Buffet, S. Stanchina, P. Radisson, E. Marche","doi":"10.23919/VLSIC.2017.8008496","DOIUrl":null,"url":null,"abstract":"To achieve better and faster material discrimination in applications like security inspection, X-Ray image sensors giving a highly resolved energy spectrum per pixel are required. In this paper, a new pixel architecture for spectral imaging is presented, exhibiting a 256 bin spectrum per pixel in a single image duration, up to two orders of magnitude higher than previous works. A prototype circuit, composed of 4×8 pixels of 756μm×800μm and hybridized to a CdTe crystal, was fabricated in a 0.13μm process. Our pixel architecture has been measured at 8 Mcounts/s/pixel while embedding on-chip charge sharing, charge induction and pile-up corrections.","PeriodicalId":176340,"journal":{"name":"2017 Symposium on VLSI Circuits","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIC.2017.8008496","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

To achieve better and faster material discrimination in applications like security inspection, X-Ray image sensors giving a highly resolved energy spectrum per pixel are required. In this paper, a new pixel architecture for spectral imaging is presented, exhibiting a 256 bin spectrum per pixel in a single image duration, up to two orders of magnitude higher than previous works. A prototype circuit, composed of 4×8 pixels of 756μm×800μm and hybridized to a CdTe crystal, was fabricated in a 0.13μm process. Our pixel architecture has been measured at 8 Mcounts/s/pixel while embedding on-chip charge sharing, charge induction and pile-up corrections.
一个256能量的bin谱x射线光子计数图像传感器,提供8Mcounts/s/pixel和片上电荷共享、电荷感应和堆积校正
为了在安全检查等应用中实现更好、更快的材料识别,需要x射线图像传感器提供每像素高分辨率的能谱。本文提出了一种用于光谱成像的新像素架构,在单个图像持续时间内显示每个像素256个bin频谱,比以前的工作高出两个数量级。采用0.13μm工艺制备了以756μm×800μm为4×8像素点并杂化到CdTe晶体上的原型电路。我们的像素架构已被测量为8 Mcounts/s/pixel,同时嵌入芯片上的电荷共享,电荷感应和堆积校正。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信