Assessment of Process-Induced Damage in High-κ Transistors

2006 IEEE International Conference on IC Design and Technology Pub Date : 2006-05-01 DOI:10.1109/ICICDT.2006.220802

C. Young, R. Choi, D. Heh, A. Neugroschel, Hokyung Park, C. Kang, G.A. Brown, S. Song, B. Lee, G. Bersuker

引用次数: 0

Abstract

Using a combination of electrical characterization techniques, one can separate contributions from generated and pre-existing electron traps inherent to high-k dielectrics, as well as identify process-induced effects in the device characteristics

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高-κ工艺损伤评估晶体管

使用电表征技术的组合，人们可以从高k介电体固有的生成和预先存在的电子陷阱中分离出贡献，并确定器件特性中的工艺诱导效应

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2006 IEEE International Conference on IC Design and Technology

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