Microwave Transistor Power Rectifiers and Applications

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Pub Date : 2016-10-01 DOI:10.1109/CSICS.2016.7751055

Z. Popovic, I. Ramos, T. Reveyrand, M. Litchfield

引用次数: 2

Abstract

This paper presents design, analysis and experimental results on synchronous and self- synchronous microwave transistor rectifiers implemented with GaN HEMTs at frequencies from 2 to 10GHz. The rectifier/power amplifier duality is explained and measurements confirming this mode of operation are presented. Finally, rectifier applications in wireless power transfer and high- frequency integrated dc-dc converters are discussed, including a GaN MMIC dc-dc converter switching at 4.6GHz.

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微波晶体管功率整流器及其应用

本文介绍了在2 ~ 10GHz频率范围内用GaN hemt实现同步和自同步微波晶体管整流器的设计、分析和实验结果。解释了整流器/功率放大器的二象性，并给出了证实这种工作模式的测量结果。最后，讨论了整流器在无线电力传输和高频集成dc-dc变换器中的应用，包括4.6GHz的GaN MMIC dc-dc变换器开关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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