{"title":"A mixed-signal readout chip for a 7-cell Si-Drift detector in 0.35-μm BiCMOS technology","authors":"I. Diehl, K. Hansen, C. Reckleben","doi":"10.1109/ESSCIRC.2007.4430302","DOIUrl":null,"url":null,"abstract":"This paper describes a mixed-signal seven-channel ASIC in 0.35-mum BiCMOS technology for the readout of Si-drift detectors used in X-ray spectroscopy. An integral count rate of more than four million pulses per second can be achieved. Count rate- and photon energy-related changes of the input pulse shape are compensated by a baseline-holding circuit, where the baseline instability remains below 1%. Within an input dynamic range between 1.9 mV and 7.2 mV a non-linearity below 1% can be reached. The equivalent input-noise voltage amounts to 31 muVrms. At maximum output voltage a channel-to-channel crosstalk of ~0.3% was measured. The power consumption of the readout chip is ~15 mW per channel. The functionalities of the main circuit blocks as well as experimental results are presented.","PeriodicalId":121828,"journal":{"name":"ESSCIRC 2007 - 33rd European Solid-State Circuits Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2007 - 33rd European Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2007.4430302","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper describes a mixed-signal seven-channel ASIC in 0.35-mum BiCMOS technology for the readout of Si-drift detectors used in X-ray spectroscopy. An integral count rate of more than four million pulses per second can be achieved. Count rate- and photon energy-related changes of the input pulse shape are compensated by a baseline-holding circuit, where the baseline instability remains below 1%. Within an input dynamic range between 1.9 mV and 7.2 mV a non-linearity below 1% can be reached. The equivalent input-noise voltage amounts to 31 muVrms. At maximum output voltage a channel-to-channel crosstalk of ~0.3% was measured. The power consumption of the readout chip is ~15 mW per channel. The functionalities of the main circuit blocks as well as experimental results are presented.