Comparison of different class-D power amplier topologies for 1-bit band-pass delta-sigma D/A converters

J. Sommarek, A. Virtanen, J. Vankka, K. Halonen
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引用次数: 8

Abstract

The suitabilities of two different class-D power ampli er architectures for I-bit bandpass ΔΣ D/A converters operating with RF signals are compared. The objective is to nd out which architecture provides the best ef ciency. The architectures considered are H-bridge voltage-mode class-D ampli er and transformer-coupled voltage-mode class-D ampli er. These architectures are compared by APLAC simulation using a ΔΣ modulated signal and by measuring discrete component GaAs MESFET realisations.
1位带通δ - σ D/A转换器中不同D类功率放大器拓扑结构的比较
比较了两种不同的D类功率放大器架构对工作在射频信号下的i位带通ΔΣ数模转换器的适用性。我们的目标是找出哪种体系结构提供了最好的效率。所考虑的结构是h桥电压型d类放大器和变压器耦合电压型d类放大器。通过使用ΔΣ调制信号的aplacc仿真和测量离散元件GaAs MESFET实现,对这些架构进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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