EMI Shielding Performance of Thin and Thick Graphene Films Placed Within Integrated Power Modules

Ghaleb Al Duhni, J. Volakis, P. Raj
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引用次数: 1

Abstract

This paper presents electromagnetic interference (EMI) analysis and the performance of graphene-enhanced shielding. Two types of graphene have practical relevance. The first is synthesized through Chemical Vapor Deposition (CVD) techniques as thin films (1–5 μm) that feature pristine quality and high conductivity. The second type is based on polymer composite films that typically have a thickness of 100–200 μm with lower electrical conductivity but effortless scalability. The first part of the paper studies the shielding effectiveness (SE) of the 5 μm graphene film that has 80% electrical conductivity of that of copper (Cu). Using the NSA 65-6 standard set-up, a SE of 25–36 dB was achieved in the frequency range of 30–100 MHz. Alternatively, using the IEEE 299 standard, the SE of the same graphene varies between 33–41 dB. The second part of the paper demonstrates two simulation scenarios for communication and mobile circuits. The first scenario represents the coupling between an inductor and a planar inverted F antenna (PIFA) antenna. The second scenario expresses the EMI between a PIFA antenna and an aggressor IC like Power Management Integrated Chip (PMIC) modeled by a patch antenna. Both scenarios operate at the LTE band frequency. In Scenario#1, an isolation of 60 dB is observed between the shielded inductor and the PIFA antenna using a graphene EMI shield. Based on the second scenario, graphene films are shown to be suitable for EMI shielding between active devices, such as PMIC, and RF components. This shielding helps to enhance the isolation by 10 dB compared to standard metal shields when operating in the WiFi band (2.4 GHz). The last part of the paper compares the SE of thin versus thick graphene composite films. Thick composite films with lower electrical conductivity offer higher SE than thinner films of higher electrical conductivity based on the NSA 65-6 standard. However, when using the IEEE 299 standard, both thick and thin graphene films exhibit the same SE.
集成电源模块内薄、厚石墨烯薄膜的电磁干扰屏蔽性能
本文介绍了电磁干扰(EMI)分析和石墨烯增强屏蔽性能。两种类型的石墨烯具有实际意义。第一种是通过化学气相沉积(CVD)技术合成的薄膜(1-5 μm),具有原始质量和高导电性。第二种类型是基于聚合物复合薄膜,其厚度通常为100-200 μm,电导率较低,但易于扩展。本文第一部分研究了导电率为铜(Cu) 80%的5 μm石墨烯薄膜的屏蔽效能(SE)。使用NSA 65-6标准设置,在30-100 MHz的频率范围内实现了25-36 dB的SE。或者,使用IEEE 299标准,相同石墨烯的SE在33-41 dB之间变化。论文的第二部分演示了通信和移动电路的两种仿真场景。第一个场景表示电感器与平面倒F天线(PIFA)天线之间的耦合。第二种情况表示PIFA天线和侵略性IC(如电源管理集成芯片(PMIC))之间的电磁干扰由贴片天线建模。这两种场景都在LTE频段频率下运行。在场景#1中,使用石墨烯EMI屏蔽,在屏蔽电感器和PIFA天线之间观察到60 dB的隔离。基于第二种情况,石墨烯薄膜被证明适用于有源器件(如PMIC)和射频元件之间的EMI屏蔽。当在WiFi频段(2.4 GHz)工作时,与标准金属屏蔽相比,这种屏蔽有助于将隔离度提高10 dB。最后比较了薄层和厚层石墨烯复合薄膜的SE。根据NSA 65-6标准,电导率较低的厚复合薄膜比电导率较高的薄薄膜提供更高的SE。然而,当使用IEEE 299标准时,厚和薄石墨烯薄膜都表现出相同的SE。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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