Improving package assembly process yield for complex high density flip chip applications

V. Solberg, V. Oganesian
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Abstract

The more advanced microprocessor and ASIC semiconductor packaging currently require several thousand I/O contacts and they are expected to expand contact I/O by 30% in the very near future. Consistent die-to-substrate interface, however, remains the most critical barrier in achieving optimum assembly process yield. Semiconductor suppliers have abandoned the traditional wirebond package assembly for many of these higher I/O products, opting for the more compact die face-down flip-chip attachment methodology. This face-down, direct attachment method significantly reduces the semiconductors package size as well as enhancing product performance. While wire-bond interface may remain the preference for many applications, face-down direct chip attachment has gained popularity for the higher-speed processor and ASIC products. There are a number of factors to consider when selecting an optimal semiconductor package configuration for the newer generations of high density controllers and processors; I/O requirement, package footprint, form factor, thermal dissipation, electrical performance, and cost. This paper will describe a new interconnect solution developed to provide a very uniform array of raised solid copper contact features integrated onto the substrate interposer for mounting very fine pitch bumped flip-chip semiconductor die. This unique raised contact substrate enables semiconductor developers to significantly reduce contact pitch on the die without reducing pad size. Solder bumped die are placed directly onto the raised contact features eliminating the need for solder printing on the package substrate. Mounting the bumped die element on this planer topography solves fundamental issues associated with electro-migration and avoids many of the current assembly process related defects. This is because the raised contact features provide a uniform package interconnect that furnishes a consistent standoff height for improving underfill flow control even with low melt solders.
提高复杂高密度倒装芯片应用的封装工艺良率
更先进的微处理器和ASIC半导体封装目前需要数千个I/O触点,预计在不久的将来,它们将使触点I/O扩展30%。然而,一致的模与基板界面仍然是实现最佳组装工艺良率的最关键障碍。半导体供应商已经放弃了传统的线键封装组装,用于许多更高I/O产品,选择更紧凑的芯片面朝下倒装芯片连接方法。这种面朝下的直接连接方法大大减小了半导体封装尺寸,并提高了产品性能。虽然线键接口可能仍然是许多应用的首选,但面向下的直接芯片连接已经在高速处理器和ASIC产品中得到了普及。在为新一代高密度控制器和处理器选择最佳半导体封装配置时,需要考虑许多因素;I/O需求、封装面积、外形尺寸、散热、电气性能和成本。本文将描述一种新的互连解决方案,该解决方案可提供非常均匀的凸起固体铜接触特性阵列,集成到衬底中间层上,用于安装非常精细的凸距倒装芯片半导体芯片。这种独特的凸触点基板使半导体开发人员能够在不减小焊盘尺寸的情况下显著减小芯片上的接触间距。焊料凸模直接放置在凸起的接触特征上,消除了在封装基板上印刷焊料的需要。在刨床地形上安装凸模元件解决了与电迁移相关的基本问题,并避免了许多当前装配过程中相关的缺陷。这是因为凸起的接触特性提供了均匀的封装互连,即使在低熔点情况下,也可以提供一致的隔离高度,以改善下填土流量控制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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