Application of blind method to phase-shifting lithography

Abstract

A blind mask and a simplified-blind (S-blind) mask proposed for phase shifting lithography are discussed. They both have very simple structures. Both the blind and S-blind methods are very effective in solving the bridging problem in single-layer-shifter phase-shifting lithography. These phase-shifting methods are suitable for 0.3- mu m lithography for the manufacture of 64-Mb DRAMs.<>