Characterization of On-die Interconnects Exhibiting Slow-Wave Propagation

Gerardo Romo L., Adán S. Sánchez, Vinit Sonawane, Scott Powers, T. Michalka, B. Nae, Y. Shadrokh, Jimmy Johansson, Peter Robinson
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Abstract

This paper presents the characterization of on-die interconnects fabricated on SOI technology exhibiting slow-wave propagation. The characterization relies on building a frequency dependent transmission line model from two measured lines of different lengths. The measured S-parameters and TDR data are found to exhibit behaviors unlike those typically observed in PCB interconnects. The odd behaviors are due to the so-called slow-wave mode of propagation. This effect occurs below 1 GHz and manifests itself by very large losses in the stack-up and a low propagation velocity. The frequency dependent model and the measurements are found to correlate well in frequency and time-domains.
显示慢波传播的片上互连的特性
本文介绍了用SOI技术制造的具有慢波传播特性的片上互连的特性。表征依赖于从两条不同长度的测量线建立频率相关的传输线模型。测量的s参数和TDR数据显示出不同于PCB互连中通常观察到的行为。这种奇怪的行为是由于所谓的慢波传播模式。这种效应发生在1ghz以下,表现为叠加损耗非常大,传播速度很低。频率相关模型和测量结果在频域和时域上具有良好的相关性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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