Integrated Bi-directional Trench Lateral Power MOSFETs for One Chip Lithium-ion Battery Protection ICs

D. H. Lu, N. Fujishima, A. Sugi, M. Sugimoto, S. Matsunaga, M. Sawada, M. Iwaya, K. Takagiwa
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引用次数: 18

Abstract

A low specific on-resistance bi-directional trench lateral power MOSFET (BTLPM) has been integrated with a controller in a 0.6mum BiCDMOS process for single-cell lithium-ion battery protector, downsizing the footprint of the protector in chip-scale package to 3mm 2, one-third of its multi-chip counterparts. The first-silicon results of the BTLPM switches demonstrated a breakdown voltage of 22V, a specific on-resistance of 6.8mOmegamm2 at a gate voltage of 4V (a gate electrical field of 2.3MV/cm)
集成双向沟槽横向功率mosfet的单片锂离子电池保护集成电路
一种低比导通电阻双向沟槽横向功率MOSFET (BTLPM)与控制器集成在0.6 μ m BiCDMOS工艺中,用于单电池锂离子电池保护器,将保护器在芯片级封装中的占地面积缩小至3mm2,是多芯片同类产品的三分之一。BTLPM开关的第一个硅结果表明,击穿电压为22V,栅极电压为4V(栅极电场为2.3MV/cm)时的导通电阻为6.8mOmegamm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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