Fabrication and electrical characterization of TiO2NT/RGO/Pd hybrid structure

S. Ghosal, P. Bhattacharyya
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Abstract

In the present work, the room temperature electrical characterization ((a) Current-Voltage (I-V) and (b) Capacitance-Voltage (C-V)) of the ternary hybrid junction based on Pd nanoparticles, Reduced Graphene Oxide (RGO) and TiO2 nanotubes is being reported. The heterojunction was fabricated by growing TiO2 oxide layer on Ti substrate by anodization method. Electrochemically derived TiO2 nanotubes were almost partially covered by transparent RGO layer, on top of which Pd nanoparticles were dispersed randomly. Structural, morphological and optical characterization like XRD, FESEM and PL were carried out in order to investigate the crystallinity, morphological feature and band gap of the grown film. Beside this, low barrier schottky nature and MOS capacitor like feature was confirmed respectively from the current-voltage characteristics (I-V) and capacitance-voltage (C-V) characteristics of the heterojunction of Au/(Pd/RGO/TiO2)/Ti based hybrid device respectively. Calculated the low threshold voltage of the device, as calculated from I-V and C-V plot, makes it useful for high performance and low power operation.
TiO2NT/RGO/Pd杂化结构的制备及电学表征
本文报道了基于Pd纳米粒子、还原氧化石墨烯(RGO)和TiO2纳米管的三元杂化结的室温电特性((a)电流电压(I-V)和(b)电容电压(C-V))。采用阳极氧化法在Ti衬底上生长TiO2氧化层制备异质结。电化学衍生的TiO2纳米管几乎部分被透明的还原氧化石墨烯层覆盖,而Pd纳米粒子则随机分布在还原氧化石墨烯层上。通过XRD、FESEM和PL等结构、形态和光学表征来研究薄膜的结晶度、形态特征和带隙。此外,从Au/(Pd/RGO/TiO2)/Ti基杂化器件异质结的电流-电压特性(I-V)和电容-电压特性(C-V)分别证实了该器件的低势垒肖特基性质和类似MOS电容器的特性。从I-V和C-V图中计算出器件的低阈值电压,使其适用于高性能和低功耗工作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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