Analytical Model for Threshold-Voltage Shift in Submicron Staggered Organic Thin-Film Transistors

Abstract

This paper presents a compact model for the threshold-voltage shift, consisting of VT,roll–off and Drain-Induced-Barrier-Lowering (DIBL), in short-channel staggered organic thin-film transistors (OTFTs). An analytical surface potential solution is derived for a staggered geometry containing two-dimensional effects which is used to extract the VT,roll–off and DIBL out of it. Thus, the closed-form and physics-based equations extend an existing compact current model by incorporating them into expressions for VT. Verification of the modeling approach is done by comparison with TCAD Sentaurus simulations as well as measurements on organic TFTs with a channel length down to 400 nm.