The Growing Application Field of Laser Debonding: From Advanced Packaging to Future Nanoelectronics

A. Phommahaxay, G. Beyer, I. Radu, E. Beyne, Alice Guerrero, Luke Prenger, K. Yess, Kim Arnold, Sebastian Tussing, W. Spiess, Thomas Rapps, K. Kennes, S. Lutter, A. Podpod, S. Brems, J. Slabbekoorn, E. Sleeckx, C. Huyghebaert, I. Asselberghs, Andy Miller
{"title":"The Growing Application Field of Laser Debonding: From Advanced Packaging to Future Nanoelectronics","authors":"A. Phommahaxay, G. Beyer, I. Radu, E. Beyne, Alice Guerrero, Luke Prenger, K. Yess, Kim Arnold, Sebastian Tussing, W. Spiess, Thomas Rapps, K. Kennes, S. Lutter, A. Podpod, S. Brems, J. Slabbekoorn, E. Sleeckx, C. Huyghebaert, I. Asselberghs, Andy Miller","doi":"10.23919/IWLPC.2019.8914124","DOIUrl":null,"url":null,"abstract":"Thin substrate handling has become one of the cornerstone technologies that enabled the development of 3D stacked ICs over the past years. Temporary wafer bonding has continuously improved and reached the maturity level required by volume manufacturing of first-generation devices. Yet the need remains for further development and performance increases. Indeed, the continuous push for denser interconnects has brought new requirements for a through-silicon-via technology on one side but also pushed temporary adhesive and carrier technology into the space of wafer reconstruction and fan-out WLP. On the opposite side of the semiconductor spectrum, at the early steps of the front-end-of-line processing, transistor scaling becomes more and more challenging, including demanding the integration of higher numbers of novel materials. To further increase the options of materials, a growing number of exploratory devices are considering using a layer transfer approach. The advances in temporary bonding and debonding technology is bringing the packaging and nanoscale world together.","PeriodicalId":373797,"journal":{"name":"2019 International Wafer Level Packaging Conference (IWLPC)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Wafer Level Packaging Conference (IWLPC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/IWLPC.2019.8914124","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

Thin substrate handling has become one of the cornerstone technologies that enabled the development of 3D stacked ICs over the past years. Temporary wafer bonding has continuously improved and reached the maturity level required by volume manufacturing of first-generation devices. Yet the need remains for further development and performance increases. Indeed, the continuous push for denser interconnects has brought new requirements for a through-silicon-via technology on one side but also pushed temporary adhesive and carrier technology into the space of wafer reconstruction and fan-out WLP. On the opposite side of the semiconductor spectrum, at the early steps of the front-end-of-line processing, transistor scaling becomes more and more challenging, including demanding the integration of higher numbers of novel materials. To further increase the options of materials, a growing number of exploratory devices are considering using a layer transfer approach. The advances in temporary bonding and debonding technology is bringing the packaging and nanoscale world together.
激光脱粘的应用领域:从先进封装到未来纳米电子学
在过去的几年里,薄衬底处理已经成为3D堆叠集成电路发展的基石技术之一。临时晶圆键合技术不断改进,达到了第一代器件量产所需的成熟水平。然而,需要进一步发展和性能的提高。事实上,对更密集互连的不断推动,一方面带来了对通硅通孔技术的新要求,但也将临时粘合剂和载体技术推向了晶圆重构和扇形WLP领域。在半导体光谱的另一边,在前端处理的早期阶段,晶体管的缩放变得越来越具有挑战性,包括要求集成更多数量的新材料。为了进一步增加材料的选择,越来越多的探索性设备正在考虑使用层转移方法。临时粘接和脱粘技术的进步将包装和纳米级世界结合在一起。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信