Domains and piezo-image of PZT family thin films

Abstract

PZT thin films are promising materials for ferroelectric random access memory (FeRAM) and micro electro-mechanical system (MEMS). For these applications, it is important to clarify the relationship between the motion of ferroelectric domains and their piezoelectric properties. Nanometer-size structure of polarized domains and grains for PLD-derived PZT thin film was investigated by AFM and KFM, when dc voltage was applied to the film through a conductive tip. Topographic and piezoelectric domain images in the film surface clearly showed switchable domains with 100 nm in size.