Design of ultra-wideband balun-low noise amplifiers

Abstract

A 0.13μm CMOS Balun-LNA in the frequency band of 2.1GHz-9.5GHz for ultra-wideband applications has been designed and simulated. A Common Gate (CG) amplifier with source degenerated inductance gives input matching over ultra-wideband frequency range. The combination of a Common-gate (CG) stage and an admittance-scaled common-source (CS) stage with replica biasing is used to maximize balanced operation while canceling the noise of the CG stage. The simulation results show that the balun-LNA achieves NF <; 2.8dB, S11 less than -10dB, maximum gain of 17.8dB with a power consumption of 18.5mW (including buffers) from 1.2V supply.