Indium arsenide (InAs) single and dual quantum-well heterostructure FinFETs

Abstract

This work presents experimental demonstration of InAs single and dual quantum well (DQW) heterostructure FinFETs (FF) and their superior performance over In_0.7Ga_0.3As QW FF. Peak mobility of 3,531 cm²/V-sec and 3,950 cm²/V-sec are obtained for InAs single QW FF and InAs DQW FF, respectively, at a fin width (W_fin) of 40nm and L_G = 2μm. Peak g_m of 480 μS/μm, 541 μS/um; I_DSAT of 121 μA/μm, 135 μA/μm; and SS_SAT of 101 mV/dec,103 mV/dec is demonstrated for single and DQW FF, respectively, at L_G=300nm (V_D = 0.5V, I_OFF=100 nA/μm). Finally, InAs DQW is shown to be a viable alternate channel for high aspect ratio n-channel FinFET.