X-ray reflectivity measurement of a iridium coated MEMS optic with atomic layer deposition

2012 International Conference on Optical MEMS and Nanophotonics Pub Date : 2012-10-04 DOI:10.1109/OMEMS.2012.6318813

T. Ogawa, Y. Ezoe, I. Mitsuishi, T. Kakiuchi, T. Moriyama, T. Ohashi, K. Mitsuda, M. Putkonen

引用次数: 0

Abstract

We coated a MEMS-based silicon optic with iridium by means of atomic layer deposition. Its X-ray reflectivity is quantitatively measured using a parallel X-ray beam at Al Kα 1.49 keV.

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原子层沉积铱包覆MEMS光学元件的x射线反射率测量

采用原子层沉积的方法在mems基硅光学器件上涂覆铱。用Al Kα 1.49 keV的平行x射线束定量测量了其x射线反射率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2012 International Conference on Optical MEMS and Nanophotonics

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