Waveform engineering in a mm-Wave stacked-HBT switching power amplifier

K. Datta, H. Hashemi
{"title":"Waveform engineering in a mm-Wave stacked-HBT switching power amplifier","authors":"K. Datta, H. Hashemi","doi":"10.1109/RFIC.2017.7969056","DOIUrl":null,"url":null,"abstract":"A new family of hybrid stacked power amplifiers (named as ‘Class-K’) are presented where each of the series stacked transistors can operate independently as different class of switching amplifiers. The voltage and current waveforms of the stacked transistors are shaped by independent harmonic load networks connected to the collector nodes of each of the stacked HBTs. A properly-designed Class-K amplifier can simultaneously achieve the high efficiency of Class-E/F amplifiers, high output power of Class-EF amplifiers, and high power gain of Class-E amplifiers. A proof-of-concept two-stage two-stacked balanced Class-K amplifier implemented in a 0.18 µm SiGe HBT BiCMOS process demonstrates 25.5 dBm output power and 26% peak PAE at 34 GHz.","PeriodicalId":349922,"journal":{"name":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2017.7969056","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

Abstract

A new family of hybrid stacked power amplifiers (named as ‘Class-K’) are presented where each of the series stacked transistors can operate independently as different class of switching amplifiers. The voltage and current waveforms of the stacked transistors are shaped by independent harmonic load networks connected to the collector nodes of each of the stacked HBTs. A properly-designed Class-K amplifier can simultaneously achieve the high efficiency of Class-E/F amplifiers, high output power of Class-EF amplifiers, and high power gain of Class-E amplifiers. A proof-of-concept two-stage two-stacked balanced Class-K amplifier implemented in a 0.18 µm SiGe HBT BiCMOS process demonstrates 25.5 dBm output power and 26% peak PAE at 34 GHz.
毫米波叠置hbt开关功率放大器的波形工程
提出了一种新的混合堆叠功率放大器系列(命名为“k类”),其中每个系列堆叠晶体管都可以作为不同类别的开关放大器独立工作。堆叠晶体管的电压和电流波形由连接到每个堆叠hbt的集电极节点的独立谐波负载网络形成。设计合理的k类放大器可以同时实现e /F类放大器的高效率、ef类放大器的高输出功率和e类放大器的高功率增益。采用0.18 μ m SiGe HBT BiCMOS工艺实现的两级双堆叠平衡k类放大器的概念验证,在34 GHz时输出功率为25.5 dBm,峰值PAE为26%。
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