Nanostructured Shottky Barriers Au-Pd-n-GaP as Linear Polarized Radiation Photodetectors for Photonic Applications

Abstract

In this article, the photoelectric properties of Au-Pd-n-GaP barrier structures in the visible spectrum are investigated by both natural and linearly polarized radiation in order to study the possibility of using these structures as a photodetectors of linearly polarized radiation for photonics needs. Thus, the intermediate Pd nanolayer 20–30 Å thick between GaP and Au creates specific properties in the nanostructure of Au-Pd-n-GaP that are of significant scientific and practical importance. The results of experimental studies of the photosensitivity of Au-Pd-n-GaP structures in natural and linearly polarized radiation provided important information about the parameters of the potential barrier, the band structure of the semiconductor, etc. These results are in satisfactory agreement with our I-U, C-U, If0~hv experiments.