Semi-Insulating Inp Obtained by Co-Implantation of Mg and Ti

Proceedings of the 7th Conference on Semi-insulating III-V Materials, Pub Date : 1992-04-21 DOI:10.1109/SIM.1992.752678

M. Salvi, J. Viallet, H. L'haridon, P. Favennec, M. Gauneau

引用次数: 0

Abstract

Implantation of magnesium acceptor in semi-insulating InP:Fe leads to a p-type layer which is further implanted with the low diffusitivity titanium deep donor, the sample recovering the semi-insulating behavior.

查看原文本刊更多论文

Mg和Ti共注入制备半绝缘Inp

在半绝缘的InP:Fe中注入镁受体形成p型层，再注入低扩散率的钛深给体，样品恢复半绝缘行为。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings of the 7th Conference on Semi-insulating III-V Materials,

自引率

0.00%

发文量