Electromagnetic Field Measurements Above On-Wafer Calibration Standards

H. Votsi, Jonas Urbonas, S. Iezekiel, P. Aaen
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引用次数: 2

Abstract

This paper presents electromagnetic field measurements obtained above on-wafer calibration standards. The results show the complexity of calibrating in an on-wafer environment, especially at high frequencies as the fields couple to adjacent devices, resulting in the standards behaving different than expected. A vector network analyzer and an electro-optic measurement system are integrated to enable the measurement of the electric-field components above a calibration wafer between 2-26GHz. The measured tangential electric-field component is compared to electromagnetic simulations, verifying the validity of the measurements. Both the tangential and normal electric-field components capture the electromagnetic fields present within an on-wafer environment, when an coplanar-waveguide offset short structure is excited.
片上校正标准以上的电磁场测量
本文介绍了在片上校准标准上获得的电磁场测量值。结果表明,在晶圆环境中校准的复杂性,特别是在高频率下,由于场与相邻器件耦合,导致标准的行为与预期不同。矢量网络分析仪和电光测量系统集成在一起,可以测量2-26GHz校准晶圆以上的电场分量。将测得的切向电场分量与电磁仿真结果进行了比较,验证了测量结果的有效性。当共面波导偏置短结构被激发时,切向和法向电场组件都捕获了在晶圆环境中存在的电磁场。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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