Chun-Yen Tseng, Shih-Chieh Chen, T. Shia, Po-Chiun Huang
{"title":"An Integrated 1.2V-to-6V CMOS Charge-Pump for Electret Earphone","authors":"Chun-Yen Tseng, Shih-Chieh Chen, T. Shia, Po-Chiun Huang","doi":"10.1109/VLSIC.2007.4342678","DOIUrl":null,"url":null,"abstract":"This work proposes a new charge pump design that achieves a high set-up ratio for electret earphone driving circuits. The voltage pumping cell is based on Cockcroft-Walton topology to achieve small area with constant MOS capacitor value under low system voltage operation. A 6-V output voltage is regulated by a PFM-based loop. This loop includes a new switched-capacitor divider as a part of the sensing circuitry. All the components are integrated in a standard 0.18 mum CMOS. Measurement results show that with 1.2 V supply, the output voltage is around 6 V with 30 mV output ripple. The maximum output driving current is up to 0.7 mA.","PeriodicalId":261092,"journal":{"name":"2007 IEEE Symposium on VLSI Circuits","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2007.4342678","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
This work proposes a new charge pump design that achieves a high set-up ratio for electret earphone driving circuits. The voltage pumping cell is based on Cockcroft-Walton topology to achieve small area with constant MOS capacitor value under low system voltage operation. A 6-V output voltage is regulated by a PFM-based loop. This loop includes a new switched-capacitor divider as a part of the sensing circuitry. All the components are integrated in a standard 0.18 mum CMOS. Measurement results show that with 1.2 V supply, the output voltage is around 6 V with 30 mV output ripple. The maximum output driving current is up to 0.7 mA.