A multiple-valued single-electron SRAM by the PADOX process

Abstract

Multiple-valued static memory consisting of a single-electron transistor (SET) and a MOSFET is proposed. The memory operation is verified by using transistors fabricated by the CMOS-compatible pattern-dependent oxidation (PADOX) process. The results indicate that a dramatic increase of CMOS memory density can be attained by the use of a SET with multiple-valued capability.