{"title":"Charge-trapping characteristics of niobium-doped La2O3 for nonvolatile memory applications","authors":"R. Shi, X. Huang, C. Leung, P. Lai","doi":"10.1109/EDSSC.2013.6628190","DOIUrl":null,"url":null,"abstract":"The charge-trapping properties of niobium-doped La<sub>2</sub>O<sub>3</sub> have been investigated based on MONOS capacitors. The memory device with niobium-doped La<sub>2</sub>O<sub>3</sub> CTL shows better characteristics than that with pure La<sub>2</sub>O<sub>3</sub> CTL in memory window and P/E properties. It also shows good retention characteristics. Therefore, the niobium-doped La<sub>2</sub>O<sub>3</sub> is a promising candidate as CTL for nonvolatile memory applications.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628190","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The charge-trapping properties of niobium-doped La2O3 have been investigated based on MONOS capacitors. The memory device with niobium-doped La2O3 CTL shows better characteristics than that with pure La2O3 CTL in memory window and P/E properties. It also shows good retention characteristics. Therefore, the niobium-doped La2O3 is a promising candidate as CTL for nonvolatile memory applications.