Intrinsic free volume in thick-film layers based on semiconductor Cu0.1Ni0.1Co1.6Mn1.2O4 ceramics

Abstract

Positron trapping processes in "free" thick-film layers based on semiconductor Cu0.1Ni0.1Co1.6Mn1.2O4 ceramics are studied. It is shown that two-state positron trapping model is appropriate for an adequate description of changes caused by additional glass phase in these materials. The observed behaviour of the second component in the fit of the experimentally measured positron lifetime spectra for thick films in comparison with bulk ceramics testifies in a favour of agglomeration of free volumes during technological process.