Mobility and velocity-field relationship in graphene

Abstract

Graphene holds great promise for applications in future integrated-circuit technology. Despite studies at low fields and low temperatures, surprisingly little data exists on the properties of graphene at practical temperatures and high electric fields required by modern transistors. In this study, we characterized graphene mobility as a function of carrier density at temperatures from 300–500 K. In addition, we obtained electron drift velocity at high-fields up to 2 V/µm, at both 300 K and 80 K.