{"title":"A 4.5 fJ/conversion-step 10-bit 0.6V Asynchronous SAR ADC for Battery-free Miniature Sensor Nodes in 65nm CMOS","authors":"A. Dadashi, Y. Berg, O. Mirmotahari","doi":"10.23919/MIXDES.2019.8787150","DOIUrl":null,"url":null,"abstract":"This paper presents a 0.6-V energy-efficient 10-bit Asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) with internal clock generator. Also a multiplexer is designed to serially transfer the output bits to outside the chip. A novel capacitive array also is proposed in this paper. The prototype is designed and fabricated in a 65-nm CMOS with a core size of 290 μm × 130 pm (0.0377 mm2). At 2.4 KS/s and Nyquist rate input, it consumes 4 nW at 0.6-V supply with an achieved signal-to-noise-and distortion ratio of 53.2 dB and a resulting figure of merit (FOM) of 4.5 fJ/conv.-step. Prototyped in a low-power 65 nm CMOS process, the ADC achieves an INL and DNL of 1.57 LSB and 0.95 LSB respectively at 0.6 V supply.","PeriodicalId":309822,"journal":{"name":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 MIXDES - 26th International Conference \"Mixed Design of Integrated Circuits and Systems\"","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/MIXDES.2019.8787150","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a 0.6-V energy-efficient 10-bit Asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) with internal clock generator. Also a multiplexer is designed to serially transfer the output bits to outside the chip. A novel capacitive array also is proposed in this paper. The prototype is designed and fabricated in a 65-nm CMOS with a core size of 290 μm × 130 pm (0.0377 mm2). At 2.4 KS/s and Nyquist rate input, it consumes 4 nW at 0.6-V supply with an achieved signal-to-noise-and distortion ratio of 53.2 dB and a resulting figure of merit (FOM) of 4.5 fJ/conv.-step. Prototyped in a low-power 65 nm CMOS process, the ADC achieves an INL and DNL of 1.57 LSB and 0.95 LSB respectively at 0.6 V supply.