On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature

2010 IEEE International Memory Workshop Pub Date : 2010-05-16 DOI:10.1109/IMW.2010.5488328

G. Beneventi, E. Gourvest, Andrea Fantini, L. Perniola, V. Sousa, S. Maitrejean, J. Bastien, A. Bastard, A. Fargeix, B. Hyot, C. Jahan, J. Nodin, A. Persico, D. Blachier, A. Toffoli, S. Loubriat, A. Roule, Sandrine Lhostis, H. Feldis, G. Reimbold, T. Billon, B. D. Salvo, Luca Larcher, Paolo Pavan, Daniel Bensahel, Pascale Mazoyer, R. Annunziata, F. Boulanger

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引用次数: 23

Abstract

This paper investigates material and electrical properties of a new chalcogenide alloy for Phase-Change Memories (PCM): Carbon-doped GeTe (named GeTeC). First, several physico-chemical, optical and electrical analyses have been performed on full-sheet chalcogenide depositions in order to understand the intrinsic GeTeC phase-change behavior, and to characterize structure and composition of amorphous and crystalline states. Then, GeTeC with two different Carbon doping (4% and 10%) has been integrated in pillar-type analytical PCM cells. Physico-chemical and electrical data indicate that GeTeC is characterized by a much more stable amorphous phase compared to undoped GeTe. Thus, GeTeC offers a slower programming speed versus GeTe, but an improved data retention at high temperature. Finally, we argue that GeTeC alloy is a promising candidate for future developments of PCM technologies for embedded applications.

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碳掺杂提高gete相变存储器高温数据保留性能的研究

本文研究了一种用于相变存储器(PCM)的新型硫系合金:碳掺杂GeTe (GeTeC)的材料和电学性能。首先，对整片硫化物沉积进行了物理化学、光学和电学分析，以了解其固有的GeTeC相变行为，并表征其非晶态和结晶态的结构和组成。然后，将两种不同碳掺杂(4%和10%)的GeTeC集成到柱型分析PCM细胞中。物理化学和电学数据表明，与未掺杂的GeTe相比，GeTeC具有更稳定的非晶相。因此，与GeTe相比，GeTeC提供了较慢的编程速度，但在高温下提高了数据保留率。最后，我们认为GeTeC合金是未来嵌入式PCM技术发展的一个很有前途的候选者。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2010 IEEE International Memory Workshop

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