Reconfiguring CMOS as Pseudo N/PMOS for Defect Tolerance in Nano-Scale CMOS

M. Ashouei, A. Singh, A. Chatterjee
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引用次数: 4

Abstract

End-of-the-roadmap nanoscale CMOS is expected to suffer from significant defectivity due to manufacturing defects, random process variations, and wear-out during normal operational. To ensure acceptable yield and reliable operation of the circuit during its life-time, future circuits must be equipped with significant defect-tolerance capabilities. Traditional defect-tolerance approaches are too expensive to be applied to general purpose circuits. In this paper, we propose a defect-tolerant CMOS logic gate architecture that exploits the inherent functional redundancy in static CMOS. This is accomplished by reconfiguring the CMOS logic gate to a pseudo-NMOS-like gate in the presence of a defect. The resulting defect-tolerant logic architecture incurs only a modest area overhead. The proposed gate design can tolerate defects in either the pull-up or pull-down network of the gate. The architecture can tolerate multiple defects across the logic gates of a CMOS logic circuit. The effectiveness of the proposed defect tolerance technique and its impact on circuit delay and power is studied. It is shown that the technique imposes little delay overhead (less than 6%) but incurs power dissipation overhead (less than 20%) in the presence of defects.
纳米级CMOS缺陷容限的伪N/PMOS重构
由于制造缺陷、随机工艺变化和正常运行过程中的损耗,纳米级CMOS预计将遭受严重的缺陷。为了确保可接受的良率和电路在其生命周期内的可靠运行,未来的电路必须配备显著的缺陷容忍能力。传统的缺陷容限方法太昂贵,无法应用于通用电路。在本文中,我们提出了一种容错CMOS逻辑门架构,利用静态CMOS固有的功能冗余。这是通过在存在缺陷的情况下将CMOS逻辑门重新配置为伪nmos类门来实现的。由此产生的容错逻辑体系结构只会产生适度的面积开销。所提出的浇口设计可以容忍上拉或下拉浇口网络中的缺陷。该结构可以容忍CMOS逻辑电路逻辑门上的多个缺陷。研究了缺陷容限技术的有效性及其对电路延迟和功率的影响。结果表明,该技术的延迟开销很小(小于6%),但在存在缺陷的情况下会产生功耗开销(小于20%)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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