Efficiency of power devices using full Cu metallization technologies

Abstract

This paper describes some advantages of Cu dual damascene structures for power LSI devices. By using the Cu process, a lower value of V/sub sat/ was obtained than that using Al-Si-Cu wiring. The lifetime of Cu lines was about 10 times longer than when using Al-Cu lines. The on-resistance of DMOS is reduced by as much as 31% when using the Cu process.