A 600V HVIC with integrated bootstrap diode function by a new emulating HVMOS

Abstract

We propose a new high voltage MOS (HVMOS) structure and its gate control circuit for integrating a bootstrap diode (BSD) function into a 600V high voltage IC (HVIC). The new HVMOS structure is free from a parasitic PNP, and its drain drift resistance is lowered without sacrificing breakdown voltage. The new gate control circuit maintain the gate voltage of HVMOS high regardless of the frequency. The new 600V HVIC realizes a sufficient charging capacity even at a low frequency operation and a high tolerance of a VS negative surge.