{"title":"A 510nW 12-bit 200kS/s SAR-assisted SAR ADC using a re-switching technique","authors":"Yao-Sheng Hu, Kai-Yue Lin, Hsin-Shu Chen","doi":"10.23919/VLSIC.2017.8008493","DOIUrl":null,"url":null,"abstract":"This paper presents a 510nW 12-bit 200kS/s SAR-assisted SAR ADC in 40nm CMOS at 0.7V supply. A re-switching technique is proposed to suppress DNL spikes so that the size of DAC capacitor array can be minimized to reduce switching energy. A set of 2-way charge pump is used to decrease settling time constant and to increase sampling linearity. The prototype ADC achieves the DNL/INL performance of 0.5/0.79 LSB. Its SNDR and SFDR at Nyquist rate are 69.1dB and 81.72dB, respectively. It results in an FoMs of 182dB and an FoMw of 1.1fJ/c.-s.","PeriodicalId":176340,"journal":{"name":"2017 Symposium on VLSI Circuits","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIC.2017.8008493","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
This paper presents a 510nW 12-bit 200kS/s SAR-assisted SAR ADC in 40nm CMOS at 0.7V supply. A re-switching technique is proposed to suppress DNL spikes so that the size of DAC capacitor array can be minimized to reduce switching energy. A set of 2-way charge pump is used to decrease settling time constant and to increase sampling linearity. The prototype ADC achieves the DNL/INL performance of 0.5/0.79 LSB. Its SNDR and SFDR at Nyquist rate are 69.1dB and 81.72dB, respectively. It results in an FoMs of 182dB and an FoMw of 1.1fJ/c.-s.