A 510nW 12-bit 200kS/s SAR-assisted SAR ADC using a re-switching technique

Yao-Sheng Hu, Kai-Yue Lin, Hsin-Shu Chen
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引用次数: 12

Abstract

This paper presents a 510nW 12-bit 200kS/s SAR-assisted SAR ADC in 40nm CMOS at 0.7V supply. A re-switching technique is proposed to suppress DNL spikes so that the size of DAC capacitor array can be minimized to reduce switching energy. A set of 2-way charge pump is used to decrease settling time constant and to increase sampling linearity. The prototype ADC achieves the DNL/INL performance of 0.5/0.79 LSB. Its SNDR and SFDR at Nyquist rate are 69.1dB and 81.72dB, respectively. It results in an FoMs of 182dB and an FoMw of 1.1fJ/c.-s.
使用重开关技术的510nW 12位200kS/s SAR辅助SAR ADC
本文提出了一种基于40nm CMOS、电压为0.7V、功率为510nW、12位、200kS/s的SAR辅助SAR ADC。提出了一种抑制DNL尖峰的重开关技术,使DAC电容阵列的尺寸最小化,从而降低开关能量。采用一组双向电荷泵来降低沉淀时间常数,提高采样线性度。原型ADC的DNL/INL性能为0.5/0.79 LSB。Nyquist率下SNDR和SFDR分别为69.1dB和81.72dB。其结果是fom为182dB, fom为1.1fJ/c -s。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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