Sharp Turn-on Diode by Steep SS “PN-Body Tied SOI FET” for Ultra-low Power RF Energy Harvesting

Masayuki Ono, J. Ida, Takayuki Mori, K. Ishibashi
{"title":"Sharp Turn-on Diode by Steep SS “PN-Body Tied SOI FET” for Ultra-low Power RF Energy Harvesting","authors":"Masayuki Ono, J. Ida, Takayuki Mori, K. Ishibashi","doi":"10.1109/EDTM55494.2023.10103123","DOIUrl":null,"url":null,"abstract":"The sharp turn-on diode by our newly proposed steep subthreshold slope (SS) “PN-Body Tied (PNBT) SOI-FET” was successfully modeled for circuit simulations. We simulated the rectenna with a combination of the PNBT-diode and the high impedance (Hi-Z) antenna. The rectification efficiency over 50 % at the input of -30 dBm will be obtained. It is very high efficiency compared with the optimized conventional diodes. We fabricated the Cockcroft-Walton rectifier with PNBT-diodes. It was also confirmed that the efficiency is improved, as expected by simulations.","PeriodicalId":418413,"journal":{"name":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM55494.2023.10103123","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The sharp turn-on diode by our newly proposed steep subthreshold slope (SS) “PN-Body Tied (PNBT) SOI-FET” was successfully modeled for circuit simulations. We simulated the rectenna with a combination of the PNBT-diode and the high impedance (Hi-Z) antenna. The rectification efficiency over 50 % at the input of -30 dBm will be obtained. It is very high efficiency compared with the optimized conventional diodes. We fabricated the Cockcroft-Walton rectifier with PNBT-diodes. It was also confirmed that the efficiency is improved, as expected by simulations.
用于超低功率射频能量收集的陡坡SS“pn体捆结SOI场效应管”锐导二极管
我们新提出的陡亚阈值斜率(SS)“pn -体系结(PNBT) SOI-FET”的急导二极管成功地进行了电路仿真建模。我们用pnbt二极管和高阻抗(Hi-Z)天线的组合来模拟整流天线。在- 30dbm输入时,整流效率可达50%以上。与优化后的传统二极管相比,它具有很高的效率。我们用pnbt二极管制作了Cockcroft-Walton整流器。仿真结果表明,该算法的效率得到了提高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信