A low power 0.13µm ADC for drift chambers

2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009) Pub Date : 2009-12-01 DOI:10.1109/ICECS.2009.5410904

S. D’Amico, M. Matteis, F. Grancagnolo, M. Panareo, R. Perrino, G. Chiodini, A. Corvaglia, G. Cocciolo, A. Baschirotto

引用次数: 1

Abstract

In this paper a 6 bits, 1GSa/s flash ADC is presented. It is included in a front end for drift chambers. The front-end has been designed in a 0.13µm CMOS technology with 1.2V supply voltage. The single circuit blocks are described in detail. The ENOB is 5.86bits, while the overall power consumption is 58.1mA.

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用于漂移室的低功耗0.13µm ADC

本文介绍了一种6位、1GSa/s的闪存ADC。它包括在前端漂移室。前端采用0.13µm CMOS技术设计，电源电压为1.2V。详细描述了单电路模块。ENOB为5.86位，而总功耗为58.1mA。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2009 16th IEEE International Conference on Electronics, Circuits and Systems - (ICECS 2009)

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