Design for millimeter-wave applications in silicon technologies

A. Cathelin, B. Martineau, N. Seller, S. Douyere, J. Gorisse, S. Pruvost, C. Raynaud, F. Gianesello, S. Montusclat, S. Voinigescu, A. Niknejad, D. Belot, J. Schoellkopf
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引用次数: 45

Abstract

This paper presents the potentialities of advanced BiCMOS and CMOS technologies for millimeter-wave applications. To begin, the target applications in these frequency bands are presented: from automotive cruise control radars to wireless links. Then, a large overview of the technological offer to address these applications is presented: SiGe BiCMOS, nanometer bulk and SOI CMOS technologies. This work focuses both on active and passive devices (BEOL) behavior to suit for design above 20 GHz. The paper continues with a presentation of several solutions for integrated circuits on the presented topic: front-end receiver blocks, transmission blocks and frequency synthesis solutions. An overview of state of the art silicon circuits is given. As a conclusion, perspectives regarding future challenges in terms of system integration and applications are discussed.
设计毫米波应用于硅技术
本文介绍了先进的BiCMOS和CMOS技术在毫米波应用中的潜力。首先,介绍了这些频段的目标应用:从汽车巡航控制雷达到无线链路。然后,概述了解决这些应用的技术方案:SiGe BiCMOS,纳米体和SOI CMOS技术。这项工作的重点是有源和无源器件(BEOL)行为,以适应20 GHz以上的设计。本文继续介绍了集成电路的几种解决方案:前端接收器块,传输块和频率合成解决方案。概述了硅电路的发展现状。最后,对系统集成和应用方面的未来挑战进行了展望。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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