A Temperature Variation Tolerant CMOS-Only Voltage Reference for RFID Applications

Asghar Bahramali, M. López-Vallejo
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引用次数: 3

Abstract

In this paper a reference voltage circuit is presented for outdoor RFID applications. The circuit consists of a Dickson charge pump and a series of stacked diode connected CMOS devices. With this configuration we have introduced a new approach to produce a 1.515V reference voltage from a Dickson charge pump which shows robust behavior against temperature variation. Taking advantage of a harvested RFID signal rendered the circuit suitable for a wide range of applications in which energy and area constraints are of great concern. The circuit has been designed with conventional CMOS devices using a commercial 40nm technology and simulated with cadence. The proposed circuit consumes 235nW power with 88 PPM/○C temperature coefficient in temperature range of −10°C to 125°C. The total active area of the circuit is 0.00036mm2. The circuit shows +10% −12% variation from the nominal value due to process corner analysis and its PSRR(dB) is −47©915MHz.
一种适用于RFID应用的耐温度变化cmos电压基准
本文提出了一种适用于户外RFID应用的参考电压电路。该电路由Dickson电荷泵和一系列堆叠二极管连接的CMOS器件组成。通过这种配置,我们引入了一种新的方法,从Dickson电荷泵产生1.515V参考电压,该电压对温度变化表现出稳健的行为。利用收集到的RFID信号,使电路适用于能量和面积限制非常关注的广泛应用。该电路采用传统CMOS器件设计,采用商用40纳米技术,并进行了仿真。电路功耗为235nW,温度系数为88 PPM/〇C,温度范围为−10℃~ 125℃。电路的总有效面积为0.00036mm2。由于过程角分析,电路显示与标称值有+10% - 12%的变化,其PSRR(dB)为- 47©915MHz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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