{"title":"The pretreatment of aluminum bondpads for electroless nickel bumping","authors":"A. Ostmann, J. Simon, H. Reichl","doi":"10.1109/MCMC.1993.302148","DOIUrl":null,"url":null,"abstract":"Electroless nickel bumping is a low cost approach to bumping. This method can also be used to convert the aluminum bondpad to a solderable surface (Ni/Au) for flip-chip application. In this study, Ni/P-bumps were produced by electroless nickel plating on different samples. For the pretreatment of aluminum bondpads, a commercial zincate solution was modified. The shear strength and the electrical resistance were investigated for different initial states of aluminum bondpads. It is shown that residues on the aluminum from the semiconductor fabrication can cause an increase in the electrical resistance and a decrease in shear strength. On clean aluminum bondpads, bumps with a shear strength of 180 cN and an electrical resistance below 1 m Omega have been achieved. Thermal cycling shows no significant decrease in the shear strength.<<ETX>>","PeriodicalId":143140,"journal":{"name":"Proceedings 1993 IEEE Multi-Chip Module Conference MCMC-93","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"31","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 1993 IEEE Multi-Chip Module Conference MCMC-93","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCMC.1993.302148","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 31
Abstract
Electroless nickel bumping is a low cost approach to bumping. This method can also be used to convert the aluminum bondpad to a solderable surface (Ni/Au) for flip-chip application. In this study, Ni/P-bumps were produced by electroless nickel plating on different samples. For the pretreatment of aluminum bondpads, a commercial zincate solution was modified. The shear strength and the electrical resistance were investigated for different initial states of aluminum bondpads. It is shown that residues on the aluminum from the semiconductor fabrication can cause an increase in the electrical resistance and a decrease in shear strength. On clean aluminum bondpads, bumps with a shear strength of 180 cN and an electrical resistance below 1 m Omega have been achieved. Thermal cycling shows no significant decrease in the shear strength.<>