Impact of Al2O3 ALD temperature on Al2O3/GaSb metal-oxide-semiconductor interface properties

2013 International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2013-05-19 DOI:10.1109/ICIPRM.2013.6562633

M. Yokoyama, Y. Asakura, H. Yokoyama, M. Takenaka, S. Takagi

引用次数: 4

Abstract

We have investigated the impact of the Al2O3 atomiclayer-deposition (ALD) temperature on Al2O3/GaSb metal-oxidesemiconductor (MOS) interface properties. We have found that the GaSb MOS interfaces are severely degraded with increasing the ALD temperature. X-ray photoelectron spectroscopy (XPS) measurements clarified that the main cause of the interface deterioration is the reduction of Sb oxides from GaSb surfaces.

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Al2O3 ALD温度对Al2O3/GaSb金属-氧化物-半导体界面性能的影响

我们研究了Al2O3原子层沉积(ALD)温度对Al2O3/GaSb金属氧化物半导体(MOS)界面性能的影响。我们发现，随着ALD温度的升高，GaSb MOS接口严重退化。x射线光电子能谱(XPS)测量表明，界面恶化的主要原因是砷化镓表面的锑氧化物的还原。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2013 International Conference on Indium Phosphide and Related Materials (IPRM)

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