L. Carbonell, H. Volders, N. Heylen, K. Kellens, R. Caluwaerts, K. Devriendt, E. Sanchez, J. Wouters, V. Gravey, K. Shah, Qian Luo, A. Sundarrajan, J. Lu, J. Aubuchon, P. Ma, M. Narasimhan, A. Cockburn, Z. Tokei, G. Beyer
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引用次数: 6
Abstract
Narrow trenches with Critical Dimensions down to 17 nm were patterned in oxide using a sacrificial FIN approach and used to evaluate the scalability of TaN/Ta, RuTa, TaN + Co and MnOx metallization schemes. So far, the RuTa metallization scheme has proved to be the most promising candidate to achieve a successful metallization of 25 nm interconnects, providing high electrical yields and a good compatibility with the slurries used during CMP.
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