M. Azzaz, E. Vianello, B. Sklénard, P. Blaise, A. Roule, C. Sabbione, S. Bernasconi, C. Charpin, C. Cagli, E. Jalaguier, S. Jeannot, S. Denorme, P. Candelier, M. Yu, L. Nistor, C. Fenouillet-Béranger, L. Perniola
{"title":"Endurance/Retention Trade Off in HfOx and TaOx Based RRAM","authors":"M. Azzaz, E. Vianello, B. Sklénard, P. Blaise, A. Roule, C. Sabbione, S. Bernasconi, C. Charpin, C. Cagli, E. Jalaguier, S. Jeannot, S. Denorme, P. Candelier, M. Yu, L. Nistor, C. Fenouillet-Béranger, L. Perniola","doi":"10.1109/IMW.2016.7495268","DOIUrl":null,"url":null,"abstract":"In this paper the memory performances of the TiN/HfO<sub>2</sub>/Ti/TiN and TiN/Ta<sub>2</sub>O<sub>5</sub>/TaOx/TiN memory stacks are compared. First, the bipolar switching parameters and the effect of the compliance current on the memory window and endurance are investigated. Then, the endurance and data retention properties are compared at a given operating current (100μA). Ta<sub>2</sub>O<sub>5</sub> based memory stack exhibits a better memory window (2 decades) and data retention, while the HfO<sub>2</sub> one shows good endurance properties (10<sup>8</sup> cycles). Finally, thanks to ab initio calculations using Density Functional Theory, the stability of the conductive filament is investigated in both HfO<sub>x</sub> and TaO<sub>x</sub> dielectrics.","PeriodicalId":365759,"journal":{"name":"2016 IEEE 8th International Memory Workshop (IMW)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 8th International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2016.7495268","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 26
Abstract
In this paper the memory performances of the TiN/HfO2/Ti/TiN and TiN/Ta2O5/TaOx/TiN memory stacks are compared. First, the bipolar switching parameters and the effect of the compliance current on the memory window and endurance are investigated. Then, the endurance and data retention properties are compared at a given operating current (100μA). Ta2O5 based memory stack exhibits a better memory window (2 decades) and data retention, while the HfO2 one shows good endurance properties (108 cycles). Finally, thanks to ab initio calculations using Density Functional Theory, the stability of the conductive filament is investigated in both HfOx and TaOx dielectrics.
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